PI5101 µRDS(on)FET

PI5101 µR_DS(on)FET^®

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Continuous
Current (I_D):

60 A

Pulsed
Current (I_DM):

150 A

R_DS(ON):

360 μOhms

Drain-to-Source Voltage (V_DS):

Gate-to-Source Voltage (V_GS):

+/-5 V

Dimensions:

4.1 x 8 mm LGA

Thermal Resistance:

R_θJ-PCB: 6°C/W
R_θJ-A: 40°C/W

Package
Inductance (L_DS):

0.1 nH

Ultra low µΩ R_DS(on)
Extremely low gate charge
Very low gate resistance
High density, low profile
Very low package inductance
Low thermal resistance

The PI5101 µR_DS(on)FET^® solution combines a high-performance 5 V, 360 µΩ lateral N-Channel MOSFET with a thermally enhanced high-density 4.1 mm x 8 mm x 2 mm land-grid-array (LGA) package to enable world class performance in the footprint area of an industry standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional “SO-8 form factor” devices for the same on-state resistance, reducing board space by ~80%. The device offers unprecedented figure-of-merit for RDS(on) x QG, gate resistance (RG) and package inductance (LDS) outperforming conventional Trench MOSFETs and enabling very low loss operation. The PI5101 LGA package is fully compatible with industry standard SMT assembly processes.

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