The PI5101 µRDS(on)FET® solution combines a high-performance 5 V, 360 µΩ lateral N-Channel MOSFET with a thermally enhanced high-density 4.1 mm x 8 mm x 2 mm land-grid-array (LGA) package to enable world class performance in the footprint area of an industry standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional “SO-8 form factor” devices for the same on-state resistance, reducing board space by ~80%. The device offers unprecedented figure-of-merit for RDS(on) x QG, gate resistance (RG) and package inductance (LDS) outperforming conventional Trench MOSFETs and enabling very low loss operation. The PI5101 LGA package is fully compatible with industry standard SMT assembly processes.