The future of standardized defense platforms using MOSA, SOSA and VPX open architectures
The future of standardized defense platforms using MOSA, SOSA and VPX open architectures
Not recommended for new designs.
The PI5101 µRDS(on) FET™ solution combines a high-performance 5V, 360µΩ lateral N-Channel MOSFET with a thermally enhanced high-density land-grid-array (LGA) package to enable world-class performance in the footprint area of an industry-standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional "SO-8 form factor" devices for the same on-state resistance, reducing board space by ~80%.
Features and Benefits
Features and benefits
High-performance 5V, 360µΩ lateral N-Channel MOSFET
Offers unprecedented figure-of-merit for low voltage control switching and analog signal routing/control
Outperforms conventional Trench MOSFETs and enables very low loss operation
Packaged in a thermally enhanced high-density 4.1mm x 8mm x 2mm LGA package
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| Part Number | Continuous Current | Rdson | Drain-to-Source Voltage (VDS) |
RoHS Compliant | Add to cart / view details | ||
|---|---|---|---|---|---|---|---|
|
PI5101-01-LGIZ
|
Part Number: PI5101-01-LGIZ |
Continuous Current:
60 A
|
Rdson:
360 µ Ohms
|
Drain-to-Source Voltage (VDS): 5 V
|
RoHS Compliant:
Yes
|
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