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PI5101 µRDS(on)FET

Not recommended for new designs.

The PI5101 µRDS(on) FET™ solution combines a high-performance 5V, 360µΩ lateral N-Channel MOSFET with a thermally enhanced high-density land-grid-array (LGA) package to enable world-class performance in the footprint area of an industry-standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional "SO-8 form factor" devices for the same on-state resistance, reducing board space by ~80%.

特点与优势

特点与优势

High-performance

High-performance 5V, 360µΩ lateral N-Channel MOSFET

Reliability

Offers unprecedented figure-of-merit for low voltage control switching and analog signal routing/control

Outperforms conventional Trench MOSFETs and enables very low loss operation

High density

Packaged in a thermally enhanced high-density 4.1mm x 8mm x 2mm LGA package

条件で絞り込む

0 製品
0 製品
製品番号 Continuous Current Rdson Drain-to-Source
Voltage (VDS)
 RoHS Compliant カートに入れる/詳細を見る
PI5101-01-LGIZ
 Part Number: PI5101-01-LGIZ Continuous Current:
60 A
 Rdson:
360 µ Ohms
 Drain-to-Source
Voltage (VDS)
:
5 V
 RoHS Compliant:
Yes

パワーシステムデザイナー

パワーシステムデザイナーを使ってクイック製品検索Watch demo video

入力仕様：

Min input: Minimum input:
Nom input: Nominal input:
Max input: Maximum input:

出力仕様：

出力
Min output: Minimum output:
Nom output: Nominal output:
Max output: Maximum output:
Vicor Power System Designer

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