Not recommended for new designs.
The PI5101 µRDS(on) FET™ solution combines a high-performance 5V, 360µΩ lateral N-Channel MOSFET with a thermally enhanced high-density land-grid-array (LGA) package to enable world-class performance in the footprint area of an industry-standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional "SO-8 form factor" devices for the same on-state resistance, reducing board space by ~80%.
High-performance 5V, 360µΩ lateral N-Channel MOSFET
Offers unprecedented figure-of-merit for low voltage control switching and analog signal routing/control
Outperforms conventional Trench MOSFETs and enables very low loss operation
Packaged in a thermally enhanced high-density 4.1mm x 8mm x 2mm LGA package
|Part Number||Continuous Current||Rdson||Drain-to-Source
|PI5101-01-LGIZ||Part Number: PI5101-01-LGIZ||
360 µ Ohms