The future of standardized defense platforms using MOSA, SOSA and VPX open architectures
Not recommended for new designs.
The PI5101 µRDS(on) FET™ solution combines a high-performance 5V, 360µΩ lateral N-Channel MOSFET with a thermally enhanced high-density land-grid-array (LGA) package to enable world-class performance in the footprint area of an industry-standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional "SO-8 form factor" devices for the same on-state resistance, reducing board space by ~80%.
特点与优势
特点与优势
High-performance 5V, 360µΩ lateral N-Channel MOSFET
Offers unprecedented figure-of-merit for low voltage control switching and analog signal routing/control
Outperforms conventional Trench MOSFETs and enables very low loss operation
Packaged in a thermally enhanced high-density 4.1mm x 8mm x 2mm LGA package
条件で絞り込む
0 製品
0 製品
| 製品番号 | Continuous Current | Rdson | Drain-to-Source Voltage (VDS) |
RoHS Compliant | カートに入れる/詳細を見る | ||
|---|---|---|---|---|---|---|---|
|
PI5101-01-LGIZ
|
Part Number: PI5101-01-LGIZ |
Continuous Current:
60 A
|
Rdson:
360 µ Ohms
|
Drain-to-Source Voltage (VDS): 5 V
|
RoHS Compliant:
Yes
|
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Min output:
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