
最適なPCBレイアウトと放熱設計技術
高密度大電流アプリケーションにおける、配電損失の最小化とパフォーマンスの向上について、次のトピックを中心に解説します。
Not recommended for new designs.
The PI5101 µRDS(on) FET™ solution combines a high-performance 5V, 360µΩ lateral N-Channel MOSFET with a thermally enhanced high-density land-grid-array (LGA) package to enable world-class performance in the footprint area of an industry-standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional "SO-8 form factor" devices for the same on-state resistance, reducing board space by ~80%.
High-performance 5V, 360µΩ lateral N-Channel MOSFET
Offers unprecedented figure-of-merit for low voltage control switching and analog signal routing/control
Outperforms conventional Trench MOSFETs and enables very low loss operation
Packaged in a thermally enhanced high-density 4.1mm x 8mm x 2mm LGA package
Part Number | Continuous Current | Rdson | Drain-to-Source Voltage (VDS) |
RoHS Compliant | カートに入れる/詳細を見る | |||
---|---|---|---|---|---|---|---|---|
PI5101-01-LGIZ | Part Number: PI5101-01-LGIZ |
Continuous Current:
60 A
|
Rdson:
360 µ Ohms
|
Drain-to-Source Voltage (VDS): 5 V
|
RoHS Compliant:
Yes
|
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最適なPCBレイアウトと放熱設計技術
高密度大電流アプリケーションにおける、配電損失の最小化とパフォーマンスの向上について、次のトピックを中心に解説します。
モジュールで構成するDC-DC電源システムの最適な設計手法
DC-DCシステムを設計するために、入出力のフィルター、保護回路、入力電源とのマッチング、負荷の動特性などの特に気を付けるポイントについて具体的な事例を用いりながら解説します。
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For California residents see information regarding California Proposition 65