Eight EV challenges of converting high voltage to SELV
Automotive and e-Mobility grapple with demands for smaller, lighter power solutions
Not recommended for new designs.
The PI5101 µRDS(on) FET™ solution combines a high-performance 5V, 360µΩ lateral N-Channel MOSFET with a thermally enhanced high-density land-grid-array (LGA) package to enable world-class performance in the footprint area of an industry-standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional "SO-8 form factor" devices for the same on-state resistance, reducing board space by ~80%.
Features and Benefits
Features and benefits
High-performance 5V, 360µΩ lateral N-Channel MOSFET
Offers unprecedented figure-of-merit for low voltage control switching and analog signal routing/control
Outperforms conventional Trench MOSFETs and enables very low loss operation
Packaged in a thermally enhanced high-density 4.1mm x 8mm x 2mm LGA package
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| Part Number | Continuous Current | Rdson | Drain-to-Source Voltage (VDS) |
RoHS Compliant | Add to cart / view details | ||
|---|---|---|---|---|---|---|---|
|
PI5101-01-LGIZ
|
Part Number: PI5101-01-LGIZ |
Continuous Current:
60 A
|
Rdson:
360 µ Ohms
|
Drain-to-Source Voltage (VDS): 5 V
|
RoHS Compliant:
Yes
|
Power System Designer
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Resources
Resources for the design engineer
38th Microelectronics Workshop (MEWS38)
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