PI5101 µRDS(on)FET

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Not recommended for new designs.

The PI5101 µR_DS(on) FET™ solution combines a high-performance 5V, 360µΩ lateral N-Channel MOSFET with a thermally enhanced high-density land-grid-array (LGA) package to enable world-class performance in the footprint area of an industry-standard SO-8 package. The PI5101 offers unprecedented figure-of-merits for DC & switching applications. The PI5101 will replace up to six conventional "SO-8 form factor" devices for the same on-state resistance, reducing board space by ~80%.

Features and benefits

High-performance 5V, 360µΩ lateral N-Channel MOSFET

Offers unprecedented figure-of-merit for low voltage control switching and analog signal routing/control

Outperforms conventional Trench MOSFETs and enables very low loss operation

Packaged in a thermally enhanced high-density 4.1mm x 8mm x 2mm LGA package

0 Products

Part Number		Continuous Current	Rdson	Drain-to-Source Voltage (VDS)	RoHS Compliant	Add to cart / view details
PI5101-01-LGIZ		Part Number: PI5101-01-LGIZ	Continuous Current: 60 A	Rdson: 360 µ Ohms	Drain-to-Source Voltage (VDS) : 5 V	RoHS Compliant: Yes

Resources for the design engineer

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